速度过冲

速度过冲是半导体电子器件中的现象，是指半导体里的载流子在各极之间的转换时间小于发射一个光学声子所需时间^[1]^[2]。因此其速度会超过饱和电子速率（英语：Velocity saturation）（最快会到饱和电子速率的三倍），会造成较快的场效应管或双极性晶体管切换。若一般的场效应管其栅极宽度小于100 nm时，此特性会很明显^[3]。

ballistic collection transistor

此器件刻意造成速度过冲，并因此提升其特性，因此称为ballistic collection transistor（英语：ballistic collection transistor）^[4]。

参考资料

^ Jyegal, Jang. Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length. AIP Advances. June 2015, 5 (6): 067118. Bibcode:2015AIPA....5f7118J. doi:10.1063/1.4922332  .
^ Tan, Michael Loong Peng; Arora, Vijay K.; Saad, Ismail; Ahmadi, Mohammad Taghi; Razali, Ismail. The drain velocity overshoot in an 80 nm metal–oxide–semiconductor field-effect transistor. Journal of Applied Physics. May 2009, 105 (7): 074503–074503–7 [9 March 2018]. Bibcode:2009JAP...105g4503T. doi:10.1063/1.3091278  .
^ SINITSKY, D.; ASSADERAGHI, F.; ORSHANSKY, M.; BOKOR, J.; HU, C. VELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN Si INVERSION LAYERS. Solid-State Electronics. 1997, 41 (8): 1119–1125. Bibcode:1997SSEle..41.1119S. CiteSeerX 10.1.1.133.2927  . doi:10.1016/S0038-1101(97)00031-2.
^ Chang, M F; Ishibashi, T. Current Trends In Heterojunction Bipolar Transistors. World Scientific Publishing Co. Pte. 1996: 126–129. ISBN 978-981-02-2097-6.

Peter Graf: Entwicklung eines Monte-Carlo-Bauelementsimulators für Si / SiGe-Heterobipolartransistoren. Herbert Utz Verlag 1999, ISBN 978-3896755742, S. 79 ff.

这是一篇物理学小作品。您可以通过编辑或修订扩充其内容。

[1] Jyegal, Jang. Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length. AIP Advances. June 2015, 5 (6): 067118. Bibcode:2015AIPA....5f7118J. doi:10.1063/1.4922332  .

[2] Tan, Michael Loong Peng; Arora, Vijay K.; Saad, Ismail; Ahmadi, Mohammad Taghi; Razali, Ismail. The drain velocity overshoot in an 80 nm metal–oxide–semiconductor field-effect transistor. Journal of Applied Physics. May 2009, 105 (7): 074503–074503–7 [9 March 2018]. Bibcode:2009JAP...105g4503T. doi:10.1063/1.3091278  .

[3] SINITSKY, D.; ASSADERAGHI, F.; ORSHANSKY, M.; BOKOR, J.; HU, C. VELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN Si INVERSION LAYERS. Solid-State Electronics. 1997, 41 (8): 1119–1125. Bibcode:1997SSEle..41.1119S. CiteSeerX 10.1.1.133.2927  . doi:10.1016/S0038-1101(97)00031-2.

[4] Chang, M F; Ishibashi, T. Current Trends In Heterojunction Bipolar Transistors. World Scientific Publishing Co. Pte. 1996: 126–129. ISBN 978-981-02-2097-6.

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速度过冲

ballistic collection transistor

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参考资料