Pages that link to "Q58592102"

The following pages link to Divacancy in 4H-SiC (Q58592102):

Displaying 24 items.

• Isolated electron spins in silicon carbide with millisecond coherence times (Q34450238) (← links)
• Quantum decoherence dynamics of divacancy spins in silicon carbide (Q37324055) (← links)
• Room temperature coherent control of defect spin qubits in silicon carbide (Q39690458) (← links)
• Quantum entanglement at ambient conditions in a macroscopic solid-state spin ensemble (Q42135876) (← links)
• Polytype control of spin qubits in silicon carbide (Q42142069) (← links)
• Optical switching of defect charge states in 4H-SiC. (Q42656989) (← links)
• Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide. (Q42720723) (← links)
• Optical charge state control of spin defects in 4H-SiC. (Q47152278) (← links)
• Native point defects on hydrogen-passivated 4H-SiC (0001) surface and the effects on metal adsorptions (Q47920772) (← links)
• High-Fidelity Bidirectional Nuclear Qubit Initialization in SiC. (Q51084584) (← links)
• Electrically and mechanically tunable electron spins in silicon carbide color centers (Q51588852) (← links)
• Optical Polarization of Nuclear Spins in Silicon Carbide. (Q53178095) (← links)
• Quantum computing with defects (Q56003010) (← links)
• Excitation spectrum as a resource for efficient two-qubit entangling gates (Q56019333) (← links)
• Spin and Optical Properties of Silicon Vacancies in Silicon Carbide − A Review (Q57653922) (← links)
• Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC (Q57968985) (← links)
• Harnessing the power of quantum systems based on spin magnetic resonance: from ensembles to single spins (Q58094121) (← links)
• Ab initio description of highly correlated states in defects for realizing quantum bits (Q58591975) (← links)
• Identification of Intrinsic Defects in SiC: Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches (Q58592053) (← links)
• Identification of the Carbon Antisite-Vacancy Pair in4H-SiC (Q58592124) (← links)
• Diamond and silicon converge (Q59063622) (← links)
• First principles calculation of spin-related quantities for point defect qubit research (Q62042678) (← links)
• Material platforms for spin-based photonic quantum technologies (Q62049496) (← links)
• Entanglement and control of single nuclear spins in isotopically engineered silicon carbide (Q99863939) (← links)