Pages that link to "Q57390794"
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The following pages link to Jawad ul Hassan (Q57390794):
Displaying 46 items.
- Isolated electron spins in silicon carbide with millisecond coherence times (Q34450238) (← links)
- Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD (Q57395006) (← links)
- 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate (Q57390020) (← links)
- Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers (Q57390022) (← links)
- Thick Epilayer for Power Devices (Q57390024) (← links)
- Divacancy in 4H-SiC (Q58592102) (← links)
- Publisher’s Note: Divacancy in 4H-SiC [Phys. Rev. Lett.96, 055501 (2006)] (Q58592109) (← links)
- Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface (Q58766439) (← links)
- Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties (Q59267724) (← links)
- Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation (Q59267734) (← links)
- High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28 Si 12 C, Natural and 13 C – Enriched 4H-SiC (Q86340204) (← links)
- Bright single photon sources in lateral silicon carbide light emitting diodes (Q86341771) (← links)
- Stark tuning and electrical charge state control of single divacancies in silicon carbide (Q86341777) (← links)
- Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface (Q86341785) (← links)
- Comparison between 3.3kV 4H-SiC Schottky and bipolar diodes (Q61825514) (← links)
- Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies (Q62570084) (← links)
- Graphene self-switching diodes as zero-bias microwave detectors (Q62570087) (← links)
- Publisher's Note: “Graphene self-switching diodes as zero-bias microwave detectors” [Appl. Phys. Lett. 106, 093116 (2015)] (Q62570088) (← links)
- In-grown stacking-faults in 4H-SiC epilayers grown on 2° off-cut substrates (Q62570090) (← links)
- Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers (Q62570095) (← links)
- Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC (Q62570097) (← links)
- Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers (Q62570105) (← links)
- Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates (Q62570111) (← links)
- Layer-number determination in graphene on SiC by reflectance mapping (Q62570112) (← links)
- Oxidation Induced ON 1 , ON 2a/b Defects in 4H-SiC Characterized by DLTS (Q62570114) (← links)
- A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC (Q62570125) (← links)
- Effective mass of electron in monolayer graphene: Electron-phonon interaction (Q62570126) (← links)
- Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers (Q62570132) (← links)
- On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications (Q62570137) (← links)
- Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth (Q62570141) (← links)
- The influence of growth conditions on carrier lifetime in 4H–SiC epilayers (Q62570144) (← links)
- High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers (Q62570151) (← links)
- Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC (Q62570154) (← links)
- Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes (Q62570160) (← links)
- Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation (Q62570162) (← links)
- High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC (Q62570173) (← links)
- Growth and Properties of SiC On-Axis Homoepitaxial Layers (Q62570187) (← links)
- In-situ surface preparation of nominally on-axis 4H-SiC substrates (Q62570202) (← links)
- On-axis homoepitaxial growth on Si-face 4H–SiC substrates (Q62570203) (← links)
- SiC Varactors for Dynamic Load Modulation of High Power Amplifiers (Q62570204) (← links)
- Defects and carrier compensation in semi-insulating4H−SiCsubstrates (Q62570209) (← links)
- High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide (Q64086237) (← links)
- Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device (Q90162641) (← links)
- Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions (Q91717476) (← links)
- Electrical and optical control of single spins integrated in scalable semiconductor devices (Q91735914) (← links)
- Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide (Q95319827) (← links)