Pages that link to "Q57319836"
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The following pages link to Takeshi Ohshima (Q57319836):
Displaying 50 items.
- Coherent control of single spins in silicon carbide at room temperature (Q29307394) (← links)
- Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays (Q33694744) (← links)
- Isolated electron spins in silicon carbide with millisecond coherence times (Q34450238) (← links)
- Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond (Q34486483) (← links)
- Stimulated emission from nitrogen-vacancy centres in diamond. (Q34550132) (← links)
- Atom-Photon Coupling from Nitrogen-vacancy Centres Embedded in Tellurite Microspheres (Q35669900) (← links)
- Nanomechanical Sensing Using Spins in Diamond (Q36266210) (← links)
- Fluorescent color centers in laser ablated 4H-SiC nanoparticles (Q36329882) (← links)
- Detection of atomic spin labels in a lipid bilayer using a single-spin nanodiamond probe (Q36990926) (← links)
- In vivo imaging and tracking of individual nanodiamonds in drosophila melanogaster embryos. (Q38741236) (← links)
- Scalable Quantum Photonics with Single Color Centers in Silicon Carbide (Q46221738) (← links)
- Magnetically sensitive nanodiamond-doped tellurite glass fibers (Q47722588) (← links)
- Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide. (Q48043557) (← links)
- Single-photon emitting diode in silicon carbide (Q48154962) (← links)
- Bright and photostable nitrogen-vacancy fluorescence from unprocessed detonation nanodiamond (Q48165112) (← links)
- Quantum error correction in a solid-state hybrid spin register (Q48892391) (← links)
- Hybrid quantum circuit with a superconducting qubit coupled to a spin ensemble. (Q50977536) (← links)
- A silicon carbide room-temperature single-photon source. (Q51340853) (← links)
- Room temperature quantum emission from cubic silicon carbide nanoparticles. (Q53498933) (← links)
- Singlet levels of the NV−centre in diamond (Q56003011) (← links)
- Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC (Q57389959) (← links)
- Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC (Q57389971) (← links)
- Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC (Q57389973) (← links)
- Metastable Defects in Low-Energy Electron Irradiated n -Type 4H-SiC (Q57389985) (← links)
- Bistable defects in low-energy electron irradiated n-type 4H-SiC (Q57389987) (← links)
- Defects in low-energy electron-irradiated n-type 4H-SiC (Q57389989) (← links)
- Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC (Q57395000) (← links)
- Deep levels in low-energy electron-irradiated 4H-SiC (Q57395005) (← links)
- Creation of silicon vacancy in silicon carbide by proton beam writing toward quantum sensing applications (Q57653914) (← links)
- Piezoelectric photothermal investigation of proton irradiation induced defects in CuInSe2 epitaxial films (Q57774961) (← links)
- Proton irradiation damages in CuInSe2 thin film solar cell materials by a piezoelectric photothermal spectroscopy (Q57774976) (← links)
- Proton-beam-induced defect levels in CuInSe2 thin-film absorbers: An investigation on nonradiative electron transitions (Q57774977) (← links)
- Atom-Photon Coupling from Nitrogen-vacancy Centers Embedded in Tellurite Microspheres (Q57828536) (← links)
- Low-Loss Tellurite Fibers With Embedded Nanodiamonds (Q57828555) (← links)
- Nanodiamond in tellurite glass Part II: practical nanodiamond-doped fibers (Q57828559) (← links)
- Energetically deep defect centers in vapor-phase grown zinc oxide (Q57829224) (← links)
- Deactivation of nitrogen donors in silicon carbide (Q58592094) (← links)
- Divacancy in 4H-SiC (Q58592102) (← links)
- Publisher’s Note: Divacancy in 4H-SiC [Phys. Rev. Lett.96, 055501 (2006)] (Q58592109) (← links)
- Identification of divacancies in 4H-SiC (Q58592116) (← links)
- Identification of the Carbon Antisite-Vacancy Pair in4H-SiC (Q58592124) (← links)
- A comparative study of the radiation hardness of silicon carbide using light ions (Q86323101) (← links)
- Radiation damage on 6H-SiC Schottky diodes (Q86323114) (← links)
- Ion beam induced charge gate rupture of oxide on 6H–SiC (Q86323148) (← links)
- Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC (Q86334103) (← links)
- Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC (Q86334126) (← links)
- Defects at nitrogen site in electron-irradiated AlN (Q86334150) (← links)
- EPR andab initiocalculation study on the EI4 center in4H- and6H-SiC (Q86334181) (← links)
- New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4 He Ion Irradiated 4H SiC (Q86334194) (← links)
- Defects Introduced by Electron-Irradiation at Low Temperatures in SiC (Q86334202) (← links)