Ohm's law survives to the atomic scale (Q34245138)

31 July 2017

title

Ohm's law survives to the atomic scale (English)

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9

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11

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B Weber

1

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Lloyd Hollenberg

10

object named as

L C L Hollenberg

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S Mahapatra

2

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H Ryu

3

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S Lee

4

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A Fuhrer

5

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T C G Reusch

6

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D L Thompson

7

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W C T Lee

8

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language of work or name

English

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publication date

1 January 2012

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volume

335

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issue

6064

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page(s)

64-67

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Silicon device scaling to the sub-10-nm regime

31 July 2017

cites work

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https://api.crossref.org/works/10.1126/SCIENCE.1214319

Technology and metrology of new electronic materials and devices

21 January 2018

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https://api.crossref.org/works/10.1126/SCIENCE.1214319

Limits on silicon nanoelectronics for terascale integration

21 January 2018

1 reference

https://api.crossref.org/works/10.1126/SCIENCE.1214319

Spectroscopy of few-electron single-crystal silicon quantum dots

21 January 2018

1 reference

https://api.crossref.org/works/10.1126/SCIENCE.1214319

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

21 January 2018

1 reference

https://api.crossref.org/works/10.1126/SCIENCE.1214319

Single dopants in semiconductors

21 January 2018

1 reference

https://api.crossref.org/works/10.1126/SCIENCE.1214319

A silicon-based nuclear spin quantum computer

21 January 2018

1 reference

https://api.crossref.org/works/10.1126/SCIENCE.1214319

Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon

21 January 2018

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https://api.crossref.org/works/10.1126/SCIENCE.1214319

Realization of Atomically Controlled Dopant Devices in Silicon

21 January 2018

1 reference

https://api.crossref.org/works/10.1126/SCIENCE.1214319

Investigating the regrowth surface of Si:P δ-layers toward vertically stacked three dimensional devices

21 January 2018

1 reference

https://api.crossref.org/works/10.1126/SCIENCE.1214319

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications

21 January 2018

1 reference

https://api.crossref.org/works/10.1126/SCIENCE.1214319

Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy

21 January 2018

1 reference

https://api.crossref.org/works/10.1126/SCIENCE.1214319

Universal Conductance Fluctuations in Metals

21 January 2018

1 reference

https://api.crossref.org/works/10.1126/SCIENCE.1214319

STM imaging of buried P atoms in hydrogen-terminated Si for the fabrication of a Si:P quantum computer

21 January 2018

1 reference

https://api.crossref.org/works/10.1126/SCIENCE.1214319

Single-shot readout of an electron spin in silicon

21 January 2018

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https://api.crossref.org/works/10.1126/SCIENCE.1214319

21 January 2018

Identifiers

DOI

10.1126/SCIENCE.1214319

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31 July 2017

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