A single-atom transistor (Q34161441)

31 July 2017

title

A single-atom transistor (English)

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31 July 2017

main subject

single-atom transistor

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8

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9

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7

Lloyd C L Hollenberg

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31 July 2017

5

Sunhee Lee

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31 July 2017

Martin Fuechsle

1

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31 July 2017

Jill A Miwa

2

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31 July 2017

Suddhasatta Mahapatra

3

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Hoon Ryu

4

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31 July 2017

Oliver Warschkow

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31 July 2017

language of work or name

English

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publication date

19 February 2012

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31 July 2017

published in

Nature Nanotechnology

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31 July 2017

volume

7

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31 July 2017

issue

4

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31 July 2017

page(s)

242-246

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Tunneling through a controllable vacuum gap

31 July 2017

cites work

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https://api.crossref.org/works/10.1038/NNANO.2012.21

Self-directed growth of molecular nanostructures on silicon

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A silicon-based nuclear spin quantum computer

21 January 2018

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https://api.crossref.org/works/10.1038/NNANO.2012.21

Single dopants in semiconductors

21 January 2018

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https://api.crossref.org/works/10.1038/NNANO.2012.21

Enhancing semiconductor device performance using ordered dopant arrays

21 January 2018

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https://api.crossref.org/works/10.1038/NNANO.2012.21

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

21 January 2018

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https://api.crossref.org/works/10.1038/NNANO.2012.21

Exchange in silicon-based quantum computer architecture.

21 January 2018

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https://api.crossref.org/works/10.1038/NNANO.2012.21

Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon

21 January 2018

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https://api.crossref.org/works/10.1038/NNANO.2012.21

Quantum device simulation with a generalized tunneling formula

21 January 2018

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https://api.crossref.org/works/10.1038/NNANO.2012.21

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

21 January 2018

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https://api.crossref.org/works/10.1038/NNANO.2012.21

Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers

21 January 2018

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https://api.crossref.org/works/10.1038/NNANO.2012.21

Ohm's law survives to the atomic scale

21 January 2018

1 reference

https://api.crossref.org/works/10.1038/NNANO.2012.21

Positioning single atoms with a scanning tunnelling microscope

21 January 2018

1 reference

https://api.crossref.org/works/10.1038/NNANO.2012.21

Embracing the quantum limit in silicon computing

21 January 2018

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https://api.crossref.org/works/10.1038/NNANO.2012.21

Single-shot readout of an electron spin in silicon

21 January 2018

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https://api.crossref.org/works/10.1038/NNANO.2012.21

Electron spin coherence exceeding seconds in high-purity silicon

21 January 2018

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12 December 2020

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

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12 December 2020

Atomically Precise Placement of Single Dopants in Si

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12 December 2020

Applied physics. Where do the dopants go?

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12 December 2020

Single-donor ionization energies in a nanoscale CMOS channel

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12 December 2020

Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

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https://api.crossref.org/works/10.1038/NNANO.2012.21

7 January 2021

Two-dimensional architectures for donor-based quantum computing

1 reference

https://api.crossref.org/works/10.1038/NNANO.2012.21

7 January 2021

Dynamic random-dot stereograms reveal up-down anisotropy and left-right isotropy between cortical hemifields

1 reference

https://api.crossref.org/works/10.1038/NNANO.2012.21

7 January 2021

Excited-state spectroscopy of single Pt atoms in Si

1 reference

https://api.crossref.org/works/10.1038/NNANO.2012.21

7 January 2021

Charge-based quantum computing using single donors in semiconductors

1 reference

https://api.crossref.org/works/10.1038/NNANO.2012.21

7 January 2021

Thermal dissociation and desorption ofPH3on Si(001): A reinterpretation of spectroscopic data

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https://api.crossref.org/works/10.1038/NNANO.2012.21

7 January 2021

Identifiers

DOI

10.1038/NNANO.2012.21

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Dimensions Publication ID

31 July 2017

1046047952

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