TOKYO ELECTRON LIMITED’s Post

Next to study: In EUV lithography, stochastically generated defects (stochastic defects) are a significant issue. In this study, the formation of the latent images of line-and-space resist patterns was simulated to assess the dependence of defect risks on the conditions of resist interfaces. The protected unit distribution was calculated on the basis of the sensitization and reaction mechanisms of chemically amplified EUV resists using a Monte Carlo method. The pinching and bridging risks were calculated to be 7.4 × 10−3–2.0 × 10−2 and 1.5 × 10−3–2.6 × 10−1, respectively, depending on the boundary conditions of low-energy secondary electrons at the interfaces. Using the obtained defect risks, we roughly estimated that the impacts of interfacial effects on pinching and bridging probabilities for low-energy secondary electrons were more than one order of magnitude and more than six orders of magnitude, respectively. Controlling the low-energy electrons at the interfaces is important for the suppression of stochastic defects. https://lnkd.in/g6N4G_CE

This question just keeps going on my mind repeatedly. There are alternatives to traditional lithography in chip manufacturing, including: Area-Selective Deposition (ASD): This technique allows precise material placement, building circuit features from the bottom up, reducing the reliance on photolithography. Nano-Imprint Lithography: This method imprints patterns directly onto substrates, bypassing some limitations of current lithography methods. Companies like Nikon are exploring this technology. Deep Ultraviolet (DUV) Lithography: DUV is used by manufacturers like SMIC to produce advanced chips without EUV machines. Though more costly and less efficient for smaller nodes, it remains a viable alternative.

Imec presents patterned structures obtained after exposure with the 0.55NA EUV scanner in the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands. The results confirm the long-predicted resolution capability of High NA EUV lithography, targeting sub 20nm pitch metal layers in one single exposure. High NA EUV will therefore be highly instrumental to continue the dimensional scaling of logic and memory technologies, one of the key pillars to push the roadmaps deep into the ‘angstrom era. These early demonstrations were only possible thanks to the set-up of the joint ASML-imec lab allowing our partners to accelerate the introduction of High NA lithography into manufacturing. https://lnkd.in/guAB5ais

The cornerstone of imec's announcement is the introduction of anamorphic lenses in High-NA EUV lithography, a transformative approach that, albeit halving the conventional scanner field size, facilitates at-resolution field stitching. This technique is instrumental in surmounting the challenges posed by the reduced field size, ensuring seamless integration of different areas of the silicon wafer during the lithography process. The collaboration with ASML and mask shop partners has been pivotal in realizing this vision, marking a stride towards the commercial viability of High-NA EUV lithography. #semiconductor #manufacturing https://lnkd.in/eqw7SVHD

💥Model list of three major lithography machine suppliers: ASML, NIKON, and CANON. 🔥Among all semiconductor equipment, lithography machines are by far the most discussed and talked-about. Currently, we have collated the lithography machine models of ASML, NIKON, and CANON. These encompass most of the lithography machine models offered by these three major lithography machine suppliers in the market. In total, there are 185 models, which are presented here for your reference.👇 #SemiconductorEquipment #LithographyMachines #ASML #NIKON #CANON #TechnologyInnovation #IndustryInsight #SemiconductorIndustry

193 Nanometer Immersion Lithography Explained 🐭 While Extreme Ultraviolet (EUV) lithography often steals the spotlight, let’s not forget the incredible impact of 193 nanometer immersion lithography. 🌊 Here’s a quick comparison to highlight its significance: Resolution: Immersion lithography increases the numerical aperture to 1.35 or higher. EUV takes a different approach, using a shorter wavelength of 13.5 nm for higher resolution. 🔍 Productivity: Immersion lithography boosts throughput, processing more wafers per hour. EUV is still catching up in terms of speed and efficiency. ⏱️ Cost: Immersion lithography is more cost-effective and has a well-established infrastructure. EUV requires significant investment and is still in the early stages of widespread adoption. 💰 💡 Why Should You Care? 💡 Proven Technology: Immersion lithography has been a reliable workhorse since the early 2000s, driving advancements in semiconductor manufacturing. 🏭 Innovative Fluids: The use of ultrapure water and other advanced fluids ensures minimal contamination and optimal performance. 💧 Cutting-Edge Optics: Companies like ZEISS Semiconductor Manufacturing Technology have developed new optics systems to support this technology, combining lenses and mirrors for better performance. 🔭 #Semiconductors #Lithography #Innovation #Technology #Productivity

One nanometer at a time...

5 things you should know about High NA EUV lithography! Bringing you the what, why and how behind the latest extreme ultraviolet ASML (EUV) lithography systems. https://lnkd.in/eN5sW3vN #asml #highna #newgeneration #lithography #euv

DNP Accelerates Development of Photomask Manufacturing Process for 2nm Generation EUV Lithography

Atomic hydrogen in the plasma environment of an EUV lithography machine can etch resist. It could be contributing to the observed resist loss. https://lnkd.in/gXfxk8iC