“Investigation of acceleration factors of the HV-H3TRB test on 3.3kV SiC SBDs” is one of Mitsubishi Electric Europe - Semiconductor topics at EPE'23 ECCE Europe in Aalborg, Denmark, 4-8 September 2023.
Recently transition from Si-IGBT module to SiC-MOSFET modules in the railway application is ongoing. Although humidity issue is one of the main concerns, humidity robustness of high voltage SiC modules has not been well investigated. In this paper, acceleration factors of the HV-H3TRB test on 3.3 kV SiC-SBDs are investigated. This investigation is based on varied condition of temperature, relative humidity, and voltage. Also, the result is compared with that of HVIGBT.
Also after listening to the presentation on Wednesday, 6 September at 14:10 pm feel warmly invited to visit the Mitsubishi Electric Europe – Semiconductor booth and discuss directly with their team.
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