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Decrease of gm/Id results from decrease in VT. VT decreases for both DIBL and GIDL . But in case of GIDL, Vg is less. Therefore GIDL becomes the reason for above question.
a) DIBL: Affects Vth in short-channel devices but not directly the gm/ID ratio in WI. b) CLM: NO c) GIDL: In WI, the weaker channel between the gate and drain increases leakage current from drain to bulk, impacting the gm/ID ratio. this is correct answer d) Body effect: NO Free Palestine 🇵🇸🇵🇸
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C - Gate Induced Drain Leakage
Analog Design Engineer
3wGIDL (Gate induced drain leakage) as at weak inversion may results in a weak lateral electric field causing leakage current between drain and bulk, which degrade the efficiency of the transistor (gm/ID).