𝗥𝗮𝗹𝗳’𝘀 𝗚𝗮𝗡 & 𝗦𝗶𝗖 𝗡𝗲𝘄𝘀 (𝗔𝘂𝗴𝘂𝘀𝘁 𝟭, 𝟮𝟬𝟮𝟰) Welcome to the latest edition of my newsletter on #siliconcarbide, #galliumnitride, and UWBG semiconductors featuring … Infineon Technologies, Innoscience, Alex Lidow (EPC - Efficient Power Conversion), Richard Reiner (Fraunhofer IAF), Center for Power Electronics Systems, Virginia Tech, University of Cambridge, VisIC Technologies Ltd., Heraeus Electronics, PINK GmbH Thermosysteme, Oleg Z. (Fraunhofer IZM), WOONGJE SUNG, Zhikai Tang, Hongping Zhao, Robert Kaplar, Andrew Binder, Ph.D., Hiu Yung (Hugh) Wong, Stefan Mönch, Shajjad Chowdhury, Mostak Mohammad, Vandana Rallabandi, Gene Sheridan (Navitas Semiconductor), Nicolas Rouger (CNRS), Uttam Singisetti (University at Buffalo), Crystal IS, Yole Group, SERMA TECHNOLOGIES, ROHM Semiconductor Europe, Toshiba Electronics Europe GmbH, Fast SiC Semiconductor Inc., 元智大學
Fast SiC Semiconductor Inc.
Semiconductors
Expedite the transformation of power electronics from Si to SiC
About us
Expedite the transformation of power electronics from Si to SiC
- Website
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https://fastsic.com/
External link for Fast SiC Semiconductor Inc.
- Industry
- Semiconductors
- Company size
- 11-50 employees
- Type
- Privately Held
Employees at Fast SiC Semiconductor Inc.
Updates
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We’re thrilled to announce that we will be exhibiting at the PCIM Europe from 11 – 13 June 2024 in Nuremberg, Germany. The PCIM Europe is the leading exhibition and conference for power electronics, intelligent motion, renewable energy and energy management. Here, you can connect with experts from industry and academia, passionate about driving research and development along the entire value chain. We will be showcasing our latest products and services and can’t wait to meet you. We're looking forward to your visit at our stand. #pcimeurope #WeArePCIMEurope #powerelectronics
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🌟 Big Milestone for FastSiC! We're thrilled to announce that our research team will be presenting at the internationally renowned IEEE ISPSD on June 3, 2024. Our paper, titled "Refining Accuracy: a Quasi-Floating Channel SPICE Model for Third-Quadrant SiC MOSFET Analysis in Both Planar and Trench Structures," marks a significant leap in SiC semiconductor modeling. This paper discusses a novel SPICE model structure designed specifically for the third-quadrant characteristics of SiC MOSFETs. Our model addresses both planar and trench structures, offering an innovative approach to enhancing the simulation accuracy and efficiency of power semiconductor devices. Join us at ISPSD 2024 to delve into the details of this groundbreaking research. Our team is excited to contribute to the ever-evolving world of semiconductor technology and to share our findings with fellow experts and enthusiasts in the field. To learn more, please visit: https://www.ispsd2024.com/ #ISPSD2024 #SemiconductorInnovation #SiC #TechConference #SPICE
ISPSD2024 – The 36th International Symposium on Power Semiconductor Devices and ICs
ispsd2024.com