Different semiconductor materials, such as ZnO, GaN, GaAs, CdTe, CIGS, InP and GaSb characterized with an SMS system emitting photoluminescence from 200 nm to 2000 nm.
PL mapping performed on a fabricated InP device showing PL peak intensity, peak position and FWHM of the emission and its attributed histogram of the data.
Spectrometer and Detectors | ||||
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Spectrometers | MicroHR | iHR320 | iHR550 | |
Excitation Lasers1 | 266 nm, 325 nm, 405 nm, 532 nm, 633 nm, 785 nm, 980 nm, 1064 nm | |||
Spectral Range (nm)2 | 250 nm – 2200 nm | |||
Recommended Gratings3 | 1800 g/mm, 600 g/mm, 300 g/mm | |||
Spectral Resolution4 (nm) | 0.39 | 0.18 | 0.1 |
Microscope | |||||
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Microscope Objectives5 | Magnification | 10X | 50X | 100X | |
Spot Size (fiber-coupled) | < 50 μm | < 12 μm | < 6 μm | ||
Spot Size (free space-coupled) | < 10 μm | < 5 μm | < 2 μm | ||
Sample Stage | XYZ (Manual and motorized options available) – 75 x 50 mm; 100 x 100 mm; 150 x 150 mm; 300 x 300 mm | ||||
Vision Camera | Software controlled vision camera included |
1 Other laser wavelengths available on request
2 Extension into mid IR available on request
3 Other gratings available on request
4 Based on 1200 g/mm grating at 500 nm and a 26 μm pixel CCD
5 Reflective objectives may be recommended if working in the UV or using multiple sources that cover a broad spectral range
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