- GitHub: Teddy-van-Jerry/ngspice-cmos
- Website: spice.tvj.one
- PDF Report:
NGSPICE_CMOS_Report.pdf
Table of Contents
NGSPICE is a powerful open-source SPICE simulation software in command line, which can efficiently simulate CMOS circuits. Basic logic gates, including NOT, NAND, AND, NOR, are implemented and analyzed. The delay parameters and response plots can help understand the circuit characteristics. As examples, the 8-input NAND gate with three distinct designs is investigated, and the clock controlled SR latch is also simulated to design appropriate MOS parameters.
Note This is the course project of Fundamentals of VLSI Design, Southeast University, 2023 Spring.
Install NGSPICE CLI app. The schematic plot and the PDF report requires installation of LaTeX.
NGSPICE is set to be compatible with HSPICE (see .spiceinit
).
My development environments:
- macOS 13 (Ventura) with M1 chip
- NGSPICE 40 (Homebrew version)
Warning There is no guarantee that the provided code can run on other platforms or other SPICE tools. Make changes if appropriate.
Delay:
- tr: rise time (from output crossing 0.1 VDD to 0.9 VDD)
- tf: fall time (from output crossing 0.9 VDD to 0.1 VDD)
- tpdr: rising propagation delay (from input to rising output crossing VDD/2)
- tpdf: falling propagation delay (from input to falling output crossing VDD/2)
- tpd: average propagation delay (tpd = (tpdr tpdf)/2)
Operating corner:
- SS: slow-slow
- NOM: nominal (average)
- FF: fast-fast
This is a 45nm CMOS library. See README for more information.
TNOM
is 27C.
Inverter with 1 PMOS and 1 NMOS. (Design Requirement: tr = tf when CL = 24fF)
Schematic
Designed MOS Parameters
MOS | W | L |
---|---|---|
PMOS | 360nm | 45nm |
NMOS | 225nm | 45nm |
tr = 119ps, tf = 120ps, tpdr = 60ps, tpdf = 64ps, tpd = 62ps.
Source inv.inc
.subckt INV gnd i o vdd
* src gate drain body type
M1 vdd i o vdd PMOS_VTL W=360nm L=45nm
M2 gnd i o gnd NMOS_VTL W=225nm L=45nm
.ends INV
Simulate with
ngspice inv.cir
Response
The CMOS NAND2 gate is symmetrically designed with parameters for the worst case.
Schematic
Designed MOS Parameters
MOS | Num | W | L |
---|---|---|---|
PMOS | 2 | 360nm | 45nm |
NMOS | 2 | 450nm | 45nm |
Source nand2.inc
.subckt NAND2 gnd i1 i2 o vdd
* src gate drain body type
Mp1 vdd i1 o vdd PMOS_VTL W=360nm L=45nm
Mp2 vdd i2 o vdd PMOS_VTL W=360nm L=45nm
Mn1 t1 i1 o gnd NMOS_VTL W=450nm L=45nm
Mn2 gnd i2 t1 gnd NMOS_VTL W=450nm L=45nm
.ends NAND2
The worst case is simulated. Simulate with
ngspice nand2.cir
Response
Simulate with
ngspice and2.cir
Response
Schematic
Source nor2.inc
.subckt NOR2 gnd i1 i2 o vdd
* src gate drain body type
Mp1 t1 i1 o vdd PMOS_VTL W=720nm L=45nm
Mp2 vdd i2 t1 vdd PMOS_VTL W=720nm L=45nm
Mn1 gnd i1 o gnd NMOS_VTL W=225nm L=45nm
Mn2 gnd i2 o gnd NMOS_VTL W=225nm L=45nm
.ends NOR2
Simulate with
ngspice nor2.cir
Response
8-input AND gate. With a large fan-in, there can be several designs. Here we want to investigate the performance of different designs.
The test circuit (defined in add8_test_inv2.inc) involves a 24fF capacitor load at the output, and 8 sets of two stages of inverters for each input. For the inverter in the test circuit, NMOS has W = 0.75um, L = 0.25um, and PMOS has W = 2.60um, L = 0.25um.
The response simulation has the PVT condition of 1.0V, FF, 25°C.
This directly extends the structure of NAND2 into NAND4.
This directly extends the structure of NAND2 into NAND8.
This is the most basic case, extending 2-input NAND to 8-input NAND, before applying an inverter.
Schematic
PVT Condition | tr (ps) | tf (ps) | tpdr (ps) | tpdf (ps) | P static (uW) | P dynamic (uW) |
---|---|---|---|---|---|---|
0.9V, SS, 70°C | 132.6 | 136.9 | 137.3 | 159.9 | 0.076 | 2.366 |
1.35V, SS, 70°C | 110.6 | 124.4 | 102.4 | 125.9 | 1.023 | 5.591 |
1.0V, NOM, 25°C | 90.5 | 99.2 | 83.8 | 110.5 | 0.227 | 2.733 |
1.5V, NOM, 25°C | 79.8 | 95.0 | 69.4 | 92.4 | 6.566 | 9.669 |
1.1V, FF, 0°C | 72.5 | 84.6 | 62.7 | 89.4 | 0.955 | 5.321 |
1.65V, FF, 0°C | 69.1 | 83.6 | 54.2 | 75.3 | 51.582 | 1.121 |
Response
Schematic
PVT Condition | tr (ps) | tf (ps) | tpdr (ps) | tpdf (ps) | P static (uW) | P dynamic (uW) |
---|---|---|---|---|---|---|
0.9V, SS, 70°C | 118.8 | 131.7 | 102.8 | 106.2 | 0.030 | 2.233 |
1.35V, SS, 70°C | 96.2 | 113.1 | 78.3 | 83.3 | 0.641 | 6.204 |
1.0V, NOM, 25°C | 77.2 | 94.9 | 62.7 | 73.0 | 0.125 | 2.592 |
1.5V, NOM, 25°C | 65.7 | 85.5 | 52.0 | 61.0 | 4.895 | 12.301 |
1.1V, FF, 0°C | 59.4 | 79.9 | 46.2 | 58.8 | 0.510 | 5.289 |
1.65V, FF, 0°C | 53.3 | 74.3 | 30.5 | 50.3 | 43.767 | 11.248 |
Response
Schematic
PVT Condition | tr (ps) | tf (ps) | tpdr (ps) | tpdf (ps) | P static (uW) | P dynamic (uW) |
---|---|---|---|---|---|---|
0.9V, SS, 70°C | 118.8 | 120.3 | 103.3 | 105.0 | 0.111 | 3.067 |
1.35V, SS, 70°C | 96.7 | 102.6 | 79.8 | 83.5 | 1.253 | 9.458 |
1.0V, NOM, 25°C | 81.5 | 86.9 | 68.4 | 73.3 | 0.301 | 4.164 |
1.5V, NOM, 25°C | 69.1 | 77.8 | 56.6 | 62.4 | 8.471 | 16.348 |
1.1V, FF, 0°C | 65.0 | 73.0 | 53.6 | 60.0 | 1.175 | 6.652 |
1.65V, FF, 0°C | 47.9 | 67.8 | 46.9 | 52.2 | 73.357 | 20.798 |
Response
Among the three designs (AND8A, AND8B and AND8C), AND8B has the smallest latency, closely followed by AND8c, and the largest latency is observed with AND8A. Compared with AND8A, the fan-in of AND8B is significantly reduced, resulting in lower latency. Though AND8C has an even smaller fan-in, the number of stages in the circuit is larger than that of AND8B. Thus, AND8B achieves a reasonable tradeoff, and has the lowest latency.
There are also some other observations:
- A larger VDD can reduce the latency to some extent, but resulting in much larger power consumption.
- A faster operating corner (FF > NOM > SS) will help cut down latency, but also increases power.
- A higher temperature increases power in return for a reduced latency.
2 PMOS 6 NMOS
Source SR_latch_clk.inc
* .param WL = 5
.subckt SR_LATCH_CLK gnd s r clk q qn vdd
* src gate drain body type
M1 qn q gnd gnd NMOS_VTL W= 90nm L=45nm
M2 qn q vdd vdd PMOS_VTL W= 270nm L=45nm
M3 q qn gnd gnd NMOS_VTL W= 90nm L=45nm
M4 q qn vdd vdd PMOS_VTL W= 270nm L=45nm
M5 ts s gnd gnd NMOS_VTL W={WL*45nm} L=45nm
M6 qn clk ts gnd NMOS_VTL W={WL*45nm} L=45nm
M7 tr r gnd gnd NMOS_VTL W={WL*45nm} L=45nm
M8 q clk tr gnd NMOS_VTL W={WL*45nm} L=45nm
.ends SR_LATCH_CLK
You need to specify the parameter WL
, for example .param WL = 5
.
We need to determine the appropriate W/L for M5
to M8
.
Using a sweep, implemented by alterparam
within a foreach
loop,
we can obtain the following graph.
Clearly, we need W/L > 4.5 (at least 4.2) for the latch to work properly.
(M1
/M3
and M2
/M4
have W/L as 2 and 6, respectively.)
ngspice SR_latch_clk.cir
Response
Copyright (C) 2023 Wuqiong Zhao ([email protected])
This project is distributed by an MIT license.