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Jerry G. Fossum

From Wikipedia, the free encyclopedia
Jerry G. Fossum
Born (1943-07-18) July 18, 1943 (age 81)
Academic background
EducationUniversity of Arizona (BS, MS, PhD)
Academic work
DisciplineElectrical engineering
Sub-disciplineSemiconductor device theory
Semiconductor device modeling
Integrated circuit design
InstitutionsSandia National Laboratories
University of Florida

Jerry G. Fossum (born July 18, 1943) is an American electrical engineer who is a Distinguished Professor Emeritus at the University of Florida College of Engineering.

Early life and education

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Fossum is a native of Phoenix, Arizona. He earned a Bachelor of Science, Master of Science, and PhD in electrical engineering from the University of Arizona.

Career

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Fossum worked for Sandia National Laboratories before joining the University of Florida faculty in 1978. In 1983, he was elected a fellow of the IEEE.[1] Fossum received the J. J. Ebers Award in 2004.[2] His scholarship focuses on the semiconductor device theory, modeling, and design.[3]

References

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  1. ^ Huang, Ya-Chi; Chiang, Meng-Hsueh; Wang, Shui-Jinn; Fossum, Jerry G. (March 2017). "GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node". IEEE Journal of the Electron Devices Society. 5 (3): 164–169. doi:10.1109/JEDS.2017.2689738.
  2. ^ "EDS Honors SOI Pioneer". SOI Industry Consortium. 18 April 2005. Retrieved 22 February 2022.
  3. ^ "Jerry G. Fossum Speaker Profile" (PDF). cmu.edu.