Bernard S. Meyerson (born June 2, 1954) is an American solid state physicist.
Bernard S. Meyerson | |
|---|---|
.png) In the World Economic Forum video Launch of the Top 10 Emerging Tech of 2021 | |
| Born | June 2, 1954 New York, New York |
| Education | |
| Occupation | Solid state physicist |
| Awards | J. J. Ebers Award (2000) |
Biography
editMeyerson is a native of New York City, born on June 2, 1954.[1] After graduating from the City College of New York,[2] he completed a master's degree and doctorate at the City University of New York, and began working for IBM.[1][2]
Meyerson was elected a fellow of the American Physical Society in 1998, "for the invention of ultra-high vacuum chemical vapor deposition and its application to low temperature silicon epitaxy, especially the fabrication of SiGe heterojunction bipolar integrated circuits for wireless telecommunications."[3] The APS awarded him the George E. Pake Prize in 2011.[2] Meyerson received the J. J. Ebers Award in 2000 from the IEEE Electron Devices Society.[4] In 2002, Meyerson became an elected member of the National Academy of Engineering.[5]
References
edit- ^ a b "B. Meyerson". American Institute of Physics. Retrieved February 22, 2022.
- ^ a b c "2011 George E. Pake Prize Recipient". American Physical Society. Retrieved February 22, 2022.
- ^ "APS fellow archive". American Physical Society. Retrieved February 22, 2022.
- ^ "Past J.J. Ebers Award Winners". Electron Devices Society, IEEE. Retrieved February 22, 2022.
- ^ "Dr. Bernard S. Meyerson". United States National Academy of Engineering. Retrieved February 22, 2022.