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Beiträge
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What are the most important considerations when selecting a mechanical testing publication?
I prefer journals that will allow me to publish a preprint (or post-publication print) in a community repository, such as arXiv. This provides free access for anyone interested, while the journal version has a nicer format and ensures the peer review process.
Aktivitäten
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Good news: our EU-Korea semiconductor ENERGIZE project, aiming to develop brain-like circuits using two-dimensional materials to create energy…
Good news: our EU-Korea semiconductor ENERGIZE project, aiming to develop brain-like circuits using two-dimensional materials to create energy…
Beliebt bei Max Lemme
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Neuroelectronic Interfaces group summer retreat at Three-Country Point NL / BE / DE!
Neuroelectronic Interfaces group summer retreat at Three-Country Point NL / BE / DE!
Beliebt bei Max Lemme
Berufserfahrung
Ausbildung
Bescheinigungen und Zertifikate
Veröffentlichungen
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2D materials for future heterogeneous electronics
Nature Communications
Graphene and two-dimensional materials (2DM) remain an active field of research in science and engineering over 15 years after the first reports of 2DM. The vast amount of available data and the high performance of device demonstrators leave little doubt about the potential of 2DM for applications in electronics, photonics and sensing. So where are the integrated chips and enabled products? We try to answer this by summarizing the main challenges and opportunities that have thus far prevented…
Graphene and two-dimensional materials (2DM) remain an active field of research in science and engineering over 15 years after the first reports of 2DM. The vast amount of available data and the high performance of device demonstrators leave little doubt about the potential of 2DM for applications in electronics, photonics and sensing. So where are the integrated chips and enabled products? We try to answer this by summarizing the main challenges and opportunities that have thus far prevented 2DM applications.
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Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity
Advanced Electronic Materials
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Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication
Nano Letters
Metal-halide perovskites are promising lasing materials for the realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low-temperature processing, leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through the costly and inefficient hybrid integration of III−V semiconductors.
Until now, however, due…Metal-halide perovskites are promising lasing materials for the realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low-temperature processing, leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through the costly and inefficient hybrid integration of III−V semiconductors.
Until now, however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography (and, therefore, on existing semiconductor manufacturing infrastructure) has been established. Here, the first methylammonium lead iodide perovskite microdisc lasers monolithically integrated into silicon nitride PICs by such a top-down process are presented. The lasers show a record low lasing threshold of 4.7 μJcm−2 at room temperature for monolithically integrated lasers, which are complementary metal−oxide−semiconductor compatible and can be integrated in the back-end-of-line processes.Andere Autor:innenVeröffentlichung anzeigen -
Non-invasive Scanning Raman Spectroscopy and Tomography for Graphene Membrane Characterization
Nano Letters
Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane-based nanoelectromechanical systems (NEMS). Here, chemical vapor deposited graphene is transferred onto target substrates to suspend it over cavities and trenches for pressure sensor applications. The development of such devices requires suitable metrology methods, i.e. large-scale characterization techniques to confirm and analyze successful graphene transfer with intact suspended…
Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane-based nanoelectromechanical systems (NEMS). Here, chemical vapor deposited graphene is transferred onto target substrates to suspend it over cavities and trenches for pressure sensor applications. The development of such devices requires suitable metrology methods, i.e. large-scale characterization techniques to confirm and analyze successful graphene transfer with intact suspended graphene membranes. We propose fast and non-invasive Raman spectroscopy mapping to distinguish between free-standing and substrate-supported graphene, utilizing the different strain and doping levels. The technique is expanded to combine two-dimensional area scans with cross-sectional Raman spectroscopy, resulting in three-dimensional Raman tomography of membrane-based graphene NEMS. The potential of Raman Tomography for in-line monitoring is further demonstrated with a methodology for automated data analysis to spatially resolve the material composition in micrometer-scale integrated devices, including free-standing and substrate-supported graphene. Raman tomography may be applied to devices composed of other two-dimensional materials as well as silicon micro- and nanoelectromechanical systems.
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Going Ballistic: Graphene Hot Electron Transistors
Solid State Communications
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude,…
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.
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Inkjet Printing of MoS2
Advanced Functional Materials
A simple and efficient inkjet printing technology is developed for molybdenum disulfide (MoS2), one of the most attractive two-dimensional layered materials. The technology effectively addresses critical issues associated with normal MoS2 liquid dispersions (such as incompatible rheology, low concentration, and solvent toxicity), and hence can directly and reliably write uniform patterns of high-quality (5–7 nm thick) MoS2 nanosheets at a resolution of tens of micrometers. The technology…
A simple and efficient inkjet printing technology is developed for molybdenum disulfide (MoS2), one of the most attractive two-dimensional layered materials. The technology effectively addresses critical issues associated with normal MoS2 liquid dispersions (such as incompatible rheology, low concentration, and solvent toxicity), and hence can directly and reliably write uniform patterns of high-quality (5–7 nm thick) MoS2 nanosheets at a resolution of tens of micrometers. The technology efficiency facilitates the integration of printed MoS2 patterns with other components (such as electrodes), and hence allows fabricating various functional devices, including thin film transistors, photoluminescence patterns, and photodetectors, in a simple, massive and cost-effective manner while retains the unique properties of MoS2. The technology has great potential in a variety of applications, such as photonics, optoelectronics, sensors, and energy storage.
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Chemical vapor deposited graphene: From synthesis to applications
physica status solidi (a)
Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD methods for graphene synthesis. We also discuss scalable methods to transfer graphene onto desired…
Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD methods for graphene synthesis. We also discuss scalable methods to transfer graphene onto desired substrates. Finally, we discuss potential applications that would benefit from a fully scaled, semiconductor technology compatible production process.
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Heterojunction Hybrid Devices from Vapor Phase Grown MoS2
Scientific Reports
We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS2) layer transferred onto p-type silicon. The fabrication is scalable as the MoS2 is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS2 layer. The diodes have a broad spectral response due to direct and indirect band transitions of…
We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS2) layer transferred onto p-type silicon. The fabrication is scalable as the MoS2 is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS2 layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS2. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering.
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Embedded Graphene Photodetectors for Silicon
Device Research Conference 2014, University of California, Santa Barbara
We introduce novel photo-detector architecture by embedding CVD-graphene inside the slot layer of deposited high-k slot waveguides that are compatible with back-end-of-the-line manufacturing of photonic integrated circuits (PICs). This approach leads to a high light-graphene interaction due to the high mode concentration in the slot region[7]. This results in enhanced absorption and enables a very compact photodetector design.
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A Manufacturable Process Integration Approach for Graphene Devices
Solid-State Electronics
In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to…
In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.
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Efficient Inkjet Printing of Graphene
Advanced Materials
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A Graphene-based Hot Electron Transistor
Nano Letters
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 10e4.
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Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes
Nano Letters
Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical devices. Here, we conclusively demonstrate the piezoresistive effect in graphene in a nanoelectromechanical membrane configuration that provides
direct electrical readout of pressure to strain transduction. This makes it highly relevant for an important class of nanoelectromechanical system (NEMS) transducers. This demonstration
is consistent with our…Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical devices. Here, we conclusively demonstrate the piezoresistive effect in graphene in a nanoelectromechanical membrane configuration that provides
direct electrical readout of pressure to strain transduction. This makes it highly relevant for an important class of nanoelectromechanical system (NEMS) transducers. This demonstration
is consistent with our simulations and previously reported gauge factors and simulation values. The membrane in our experiment acts as a strain gauge independent of crystallographic orientation and allows for aggressive size scalability. When compared with conventional pressure sensors, the sensors have orders of magnitude higher sensitivity per unit area.Andere Autor:innenVeröffentlichung anzeigen -
RF Performance Projections of Graphene FETs vs. Silicon MOSFETs
ECS Solid State Letters, 1(5):Q39-Q41, 2012.
A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of speed despite their higher mobility. This is counterintuitive, but can be explained by the effect of a strongly nonlinear voltage-dependent gate capacitance. GFETs achieve their maximum performance only for narrow ranges of VDS and IDS, which must be…
A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of speed despite their higher mobility. This is counterintuitive, but can be explained by the effect of a strongly nonlinear voltage-dependent gate capacitance. GFETs achieve their maximum performance only for narrow ranges of VDS and IDS, which must be carefully considered for circuit design. For our parameter set, GFETs require at least μ = 3000 cm2 V−1 s−1 to achieve the same performance as 65 nm silicon MOSFETs.
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A Simple Route Towards High-concentration Surfactant-free Graphene Dispersions
Carbon 50, 3092-3116
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Molecular Beam Epitaxy of Graphene on Mica
Physica Status Solidi b
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Spectral sensitivity of a graphene/silicon pn-junction photodetector
IEEE
We investigate the optical properties of graphene-silicon Schottky barrier diodes composed of chemical vapor deposited (CVD) graphene on n- and p-type silicon (Si) substrates. The diodes fabricated on n-Si substrate exhibit better rectifying behavior compared to p-Si devices in the dark. An ultra-broadband spectral response is achieved for n-Si diodes. The results are compared with the spectral response of a molybdenum disulfide (MoS2) - p-type silicon photodiode.
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Projekte
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GRADE
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GRADE is a three-year STREP proposal focused on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies.
We investigate two different concepts with specific advantages. Graphene field effect transistors (GFET) use graphene as a high-mobility transistor channel. Alternative “graphene base transistors” (GBT) are novel hot-electron devices that use graphene sandwiched between two insulating…GRADE is a three-year STREP proposal focused on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies.
We investigate two different concepts with specific advantages. Graphene field effect transistors (GFET) use graphene as a high-mobility transistor channel. Alternative “graphene base transistors” (GBT) are novel hot-electron devices that use graphene sandwiched between two insulating layers, each in turn covered by a metal layer.
Considering the unique high frequency characteristics of the GFET and the GBT, the consortium envisions innovative applications in communication, automotive, security and environmental monitoring. Low power wireless communication systems operating above 100Gbit/s or handheld portable THz sensor systems for detection of dangerous agents seem feasible with active devices operating in the THz regime. To be affordable for a broad range of consumers, THz devices must be scalable and integrated with silicon technology. GBTs and GFETs can fulfill this requirement.
The proposed research enables the demonstration and assessment of these novel device concepts for future THz systems, and prepares their transition to semiconductor manufacturing." (source: http://www.grade-project.eu//objectives.html)Andere Mitarbeiter:innenProjekt anzeigen
Auszeichnungen/Preise
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RWTH Fellow
RWTH Aachen University
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ERC Proof-of-Concept Grant
European Research Council
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ERC Grant
European Research Council
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Feodor Lynen Research Fellowship
Alexander von Humboldt-Foundation
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NanoFutur Award
German Ministry of Education and Research (BMBF)
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Borchers Plakette
RWTH Aachen University
Sprachen
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German
Muttersprache oder zweisprachig
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English
Muttersprache oder zweisprachig
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Save the date: On Wednesday, July 17, ticket sales for the Graduate Festival 2024 will start at 10 am! ☝ All eligible participants have received…
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Thank you for visiting AMO GmbH today, Katharina Willkomm, Member of Parliament (Mitglied des Bundestags, MdB, FDP). I am always happy when our…
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It is great to be part of the AI-NET team, and I am proud to contribute with AMO's NeuroPIC Photonic Reservoir chip. The preprint of the…
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Glad to have been a part of this with our NeuroPIC! To wrap up our work we have recently submitted a manuscript and if you're very curious the…
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We are proud to be part of this year's EE Times | Electronic Engineering Times Silicon 100: Startups Worth Watching in 2024*. ℹ*…
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Congratulations to Agata Piacentini and co-workers for their work on "Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN", which is in…
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