File:T-ray metamaterial semiconductor modulator.jpg
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English: a) C-DOT-rays shine through the modulator. (b) With no voltage applied, electrons can flow across the gap in the gold structure. The electrons absorb a few T-rays as they flow easily around the two loops. (c) Applying voltage prevents electrons from crossing the gap. But they absorb far more T-rays as they slosh back and forth between the upper and lower halves of the structure. Fewer T-rays pass through the device. |
| Date | |
| Source | United States Department of Energy, Los Alamos National Laboratory |
| Author | Hou-Tong Chen (Los Alamos National Laboratory) |
| Permission (Reusing this file) |
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The metamaterial and the semiconductor together form a device that can modulate the intensity of the T-rays by up to 50 percent when a voltage is applied to the gold structures. The experimental demonstration of the device exceeds the performance of existing electrical terahertz modulators
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This work is in the public domain in the United States because it is a work prepared by an officer or employee of the United States Government as part of that person’s official duties under the terms of Title 17, Chapter 1, Section 105 of the US Code.
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
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| current | 14:29, 21 September 2009 | | 450 × 481 (72 KB) | Ti-30X (talk | contribs) | {{Information |Description={{en|1=a) C-DOT-rays shine through the modulator. (b) With no voltage applied, electrons can flow across the gap in the gold structure. The electrons absorb a few T-rays as they flow easily around the two loops. (c) Applying vol |
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